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Ferroelectric-Gate Field Effect Transistor Memories by Byung-Eun Park — OmList

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Ferroelectric-Gate Field Effect Transistor Memories cover

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Ferroelectric-Gate Field Effect Transistor Memories

by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon

“Device Physics and Applications”

2016402 pages~7½h read

Ferroelectric-Gate Field Effect Transistor Memories cover

only cover on file

Ferroelectric-Gate Field Effect Transistor Memories

by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon

“Device Physics and Applications”

2016402 pages~7½h read

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§ Details

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Author

Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon

Published

2016

Pages

402

Language

ENG

ISBN

9789402408416

§ Where to read

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info

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First published 2016
402 pages · in English
№ 799854

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